By Topic

Ion channeling investigation of proton-irradiation-induced In–Ga atomic intermixing in self-assembled InAs/GaAs quantum dot structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhu, J. ; College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 ; Oktyabrsky, S. ; Huang, M.B.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have applied ion channeling techniques to investigate effects of proton irradiation combined with thermal annealing on In–Ga atomic intermixing in a self-assembled InAs/GaAs quantum dot (QD) system. A molecular-beam-epitaxy grown InAs/GaAs QD sample was first irradiated with 1.0 MeV protons to a dose of 1014 cm-2 and subsequently annealed at temperatures between 300–700 °C. Ion channeling measurements indicate that such postgrowth processing leads to an enhanced amount of In atoms registering along the <100> growth direction. This observation yields direct evidence for the occurrence of In–Ga atomic intermixing in the QD structure during postirradiation annealing. The effective activation energy for such intermixing process is determined to be ∼0.2 eV. Furthermore, ion channeling data suggest three distinct stages for In–Ga atomic intermixing processes in the QD system, with In–Ga interdiffusion proceeding vertically along the growth direction or laterally in the QD layer, depending on postirradiation annealing temperatures.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 10 )