By Topic

Transformation of electrical transport from variable range hopping to hard gap resistance in Zn1-xFexO1-v magnetic semiconductor films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Tian, Y.F. ; School of Physics and Microelectronics, Shandong University, Jinan, Shandong 250100, People’s Republic of China and National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, People’s Republic of China ; Yan, Shi-Shen ; Zhang, Y.P. ; Song, H.Q.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2386925 

Transformation of the electrical transport from the Efros and Shklovskii [J. Phys. C 8, L49 (1975)] variable range hopping to the “hard gap” resistance was experimentally observed in a low temperature range as the Fe compositions in Zn1-xFexO1-v ferromagnetic semiconductor films increase. A universal form of the resistance versus temperature, i.e., ρ∝exp[TH/T+(TES/T)1/2], was theoretically established to describe the experimental transport phenomena by taking into account the electron-electron Coulomb interaction, spin-spin exchange interaction, and hard gap energy. The spin polarization ratio, hard gap energy, and ratio of exchange interaction to Coulomb interaction were obtained by fitting the theoretical model to the experimental results. Moreover, the experimental magnetoresistance was also explained by the electrical transport model.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 10 )