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Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode

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7 Author(s)
Ray, S.K. ; EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom ; Groom, K.M. ; Alexander, R. ; Kennedy, K.
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In this paper we discuss a technique for broadening the emission and gain spectra of 1.3 μm quantum dot superluminescent light emitting diodes (SLEDs). By incorporating different amounts of indium in different wells of a multi-dot-in-well stack we are able to tailor the emission and gain spectra of the devices. This technique allows us to overlap the ground state of one dot-in-well (DWELL) with the excited state of another to achieve broader and flatter emission spectra compared to a SLED design comprising DWELL layers of constant indium composition. Due to the low internal loss of these structures, this broadening is achieved without a significant reduction in the output power of the devices.

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Journal of Applied Physics  (Volume:100 ,  Issue: 10 )