By Topic

Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ray, S.K. ; EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom ; Groom, K.M. ; Alexander, R. ; Kennedy, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2365387 

In this paper we discuss a technique for broadening the emission and gain spectra of 1.3 μm quantum dot superluminescent light emitting diodes (SLEDs). By incorporating different amounts of indium in different wells of a multi-dot-in-well stack we are able to tailor the emission and gain spectra of the devices. This technique allows us to overlap the ground state of one dot-in-well (DWELL) with the excited state of another to achieve broader and flatter emission spectra compared to a SLED design comprising DWELL layers of constant indium composition. Due to the low internal loss of these structures, this broadening is achieved without a significant reduction in the output power of the devices.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 10 )