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A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones

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3 Author(s)
Makioka, S. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Yoshikawa, N. ; Kanazawa, K.

A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P1dB of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm2. We consider that the MuMIC is the most effective candidate for high frequency circuits

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 5 )