By Topic

1.5 μm analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. El-Diwany ; Dept. of Analog Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA ; J. McGregor ; E. Demirliogiu ; R. Huang

ABCD150 is a 1.5 μm analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance Rds(on) (in Ω.mm2 ) at their respective operating voltages

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995

Date of Conference:

2-3 Oct 1995