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α(6H)-SiC pressure sensors for high temperature applications

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4 Author(s)
Okojie, R.S. ; Kulite Semicond. Products, Leonia, NJ, USA ; Ned, A.A. ; Kurtz, Anthony D. ; Carr, W.N.

A batch-microfabricated 6H-SiC diaphragm-based piezoresistive pressure sensors with working temperature range between 80°F to 500°F had been produced. The net output voltage shows an output voltage of 131.59 mV at full-scale pressure of 1000 psi. The net output voltage response to temperature up to 500°F is also presented. The Temperature Coefficient of Resistance (TCR) of the device exhibits a TCR of -3.07%/100°F at 180°F and eventually becomes a positive value of 4.24%/100°F at 500°F. The Temperature Coefficient of Gage Factor (TCGF) exhibits negative values of -15%/100°F and -10%/100°F at 180°F and 500°F, respectively. The problem of micropipes in 6H-SiC was effectively resolved, making it possible to fabricate thin diaphragms of about 25 μm

Published in:
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on

Date of Conference: 11-15 Feb 1996

Page(s):
146 - 149
Meeting Date :
11 Feb 1996-15 Feb 1996
Print ISBN:
0-7803-2985-6
INSPEC Accession Number:
5316221
Conference Location :
San Diego, CA
Digital Object Identifier :
10.1109/MEMSYS.1996.493844
Product Type:
Conference Publications

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