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An overview of high frequency circuit design on the GMMT GaAs HBT process

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5 Author(s)
McCullagh, M. ; GEC-Marconi Mater. Technol. Ltd., Towcester, UK ; Moult, J. ; Davies, R. ; Wallis, B.
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A new GaAs HBT process has been developed at GMMT for the implementation of high performance microwave and optical sub-systems. Two versions of the process exist: B20 for small signal and digital applications and B20P for microwave power applications. 1/2 static frequency dividers have been designed on the process which toggle at frequencies up to 17 GHz. X-band power MMICs operating over a bandwidth of 9 to 12 GHz deliver an output power of 2 W with a power added efficiency of 30% and associated gain of 14 dB. The unique characteristics of excellent power performance, low 1/f noise and wideband operation will ensure that GaAs HBTs act as a key enabling technology for meeting the ever increasing demands of wireless and optical systems

Published in:

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Date of Conference:

Nov 1995