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Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma

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5 Author(s)
Barbour, J.C. ; Sandia National Laboratories, Albuquerque, New Mexico 87185 ; Stein, H.J. ; Popov, O.A. ; Yoder, M.
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Good quality, low temperature silicon nitride and oxynitride films were deposited downstream from an electron cyclotron resonance (ECR) plasma source using SiH4 and N2 gas mixtures. The Si/N ratio and H content in the deposited films were determined using Rutherford backscattering spectrometry and elastic recoil detection. The H concentration was minimum for films with compositions closest to that of stoichiometric Si3N4. The optimum conditions for producing a stoichiometric Si3N4 were a SiH4/N2 flow ratio between 0.1 and 0.2, and an electrically isolated sample far from the ECR source. Infrared absorption spectra showed that as the film composition changed from N rich to Si rich the dominant bonds associated with H changed from N–H to Si–H.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:9 ,  Issue: 3 )

Date of Publication:

May 1991

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