Cart (Loading....) | Create Account
Close category search window
 

Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Barbour, J.C. ; Sandia National Laboratories, Albuquerque, New Mexico 87185 ; Stein, H.J. ; Popov, O.A. ; Yoder, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.577392 

Good quality, low temperature silicon nitride and oxynitride films were deposited downstream from an electron cyclotron resonance (ECR) plasma source using SiH4 and N2 gas mixtures. The Si/N ratio and H content in the deposited films were determined using Rutherford backscattering spectrometry and elastic recoil detection. The H concentration was minimum for films with compositions closest to that of stoichiometric Si3N4. The optimum conditions for producing a stoichiometric Si3N4 were a SiH4/N2 flow ratio between 0.1 and 0.2, and an electrically isolated sample far from the ECR source. Infrared absorption spectra showed that as the film composition changed from N rich to Si rich the dominant bonds associated with H changed from N–H to Si–H.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:9 ,  Issue: 3 )

Date of Publication:

May 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.