Cart (Loading....) | Create Account
Close category search window
 

Preparation and characterization of amorphous SiC:H thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Delplancke, M.P. ; Center for Advanced Materials, Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Cyclotron Road, Berkeley, California 94720Department of Chemistry, University of California, Berkeley, California 94720 ; Powers, J.M. ; Vandentop, G.J. ; Salmeron, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.577431 

Silicon carbide films were deposited by plasma enhanced chemical vapor deposition utilizing monomethylsilane (CH3SiH3). Silicon (100) and polycrystalline gold were used as substrates. A mass spectrometric analysis of the monomethylsilane plasma showed that the majority of the Si–C bonds were preserved in the gas phase. The composition, the density and morphology of the amorphous SiC:H (a:SiC:H) films were studied as a function of substrate temperature, composition of the ion flux bombarding the surface and the kinetic energy of these ions. The surface science techniques utilized for these investigations include x‐ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared, and Raman spectroscopies.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:9 ,  Issue: 3 )

Date of Publication:

May 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.