Electron stimulated desorption effects in secondary ion emission from BF⁺2 implanted SiO2

The effect of electron stimulated desorption (ESD) during secondary ion mass spectrometry (SIMS) from BF⁺2 implanted SiO2 was investigated. We have quantitatively illustrated that the F⁺ depth profile is directly related to electron current density while the Si⁺ and B⁺ profiles remain nearly constant. We have also determined that ESD produces the same ionic species as does Ar⁺ bombardment. A mass analysis of ESD species from BF⁺2 implanted SiO2 has revealed a very extensive ionization from this surface. In addition to F⁺ , a significant abundance of Si⁺ , Si⁺² , Si⁺³, and SiO⁺ ESD was also detected.