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Gas sensor fabricated in commercial CMOS technology

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2 Author(s)
Srivastava, A. ; Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA ; George, N.

Reports the design of a bulk-micromachined gas sensor fabricated in commercial 2 μm n-well CMOS technology using a high level computer aided design tool. The gas sensor is a palladium-oxide-polysilicon micromachined MOS structure. The design includes an additional layer in CMOS called `open' which enables the formation of a `cavity' in the silicon substrate. After the fabrication of CMOS chips single maskless etch in an aqueous solution of ethylenediamine-pyrocatechol (EDP) or xenon difluoride (XeF2) is done to create a cavity. This results in a micromachined structure with the polysilicon and the oxide on it, suspended over the `cavity' formed. Finally palladium is deposited over the micromachined structure in a high vacuum evaporator. The adsorption of the hydrogen gas in palladium changes C-V characteristics of the MOS structure. In the present work we report part of the studies on gas sensor development

Published in:

System Theory, 1996., Proceedings of the Twenty-Eighth Southeastern Symposium on

Date of Conference:

31 Mar-2 Apr 1996