Cart (Loading....) | Create Account
Close category search window

Selective etching of silicon nitride using remote plasmas of CF4 and SF6

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Loewenstein, Lee M. ; Semiconductor Process and Design Center, Texas Instruments, Incorporated, Dallas, Texas 75265

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Silicon nitride is etched using a remote plasma discharge of CF4 or SF6, diluted in a He or N2 carrier gas. By itself, this process chemistry does not etch silicon nitride selectively, a desirable property of a useful process; however, by including a source of abstractable hydrogen, e.g., H2 or CH4, in the process mix, the Si3N4 :Si and Si3N4 :SiO2 etch rate ratios can be considerably increased. The hydrogen source serves to consume atomic fluorine, enhancing the preferential deposition of a fluorocarbon layer on Si and SiO2 (in the case of CF4 ). This fluorocarbon film impedes Si and SiO2 etching by atomic F. For SF6 , some form of etch‐impeding surface layer also may be formed.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:7 ,  Issue: 3 )

Date of Publication:

May 1989

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.