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We have studied low‐temperature photoluminescence in CdTe containing Ga impurity in the 1.28–1.61 eV energy region. The impurity was introduced either by implantation of bulk CdTe wafers or by doping CdTe ingots during Bridgman growth. The presence of Ga was discovered and studied in epitaxial layers of CdTe grown on GaAs substrates by pulsed laser evaporation and epitaxy. Extra features caused by the Ga presence were observed in the edge emission and in the excitonic regions. Implantation results in extended mechanical damage, and only a small fraction of the implanted Ga is optically active. Samples doped during growth by the Bridgman technique exhibit changes in the excitonic region. The photoluminescence spectra of CdTe epitaxial films grown on GaAs exhibit features which are similar to those observed in bulk CdTe with Ga impurity.