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Paramagnetic point defects in boron‐implanted Hg0.7Cd0.3Te and CdTe

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3 Author(s)
Bowman, R.C. ; Chemistry and Physics Laboratory, The Aerospace Corporation, Los Angeles, California 90009 ; Venturini, E.L. ; Witt, S.N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.574862 

This paper describes the initial observations of electron paramagnetic resonance (EPR) spectra from Hg0.7Cd0.3Te and CdTe after implantation with boron ions. Sharp and nearly isotropic EPR signals with the free‐electron g values were easily detected at low temperatures (i.e., ≤ 78 K) when the boron ion implant dose was 1×1016 ions/cm2 or larger. For identical implant conditions, more intense signals and narrower peaks were obtained from Hg0.7Cd0.3Te samples when compared to the spectra for CdTe. However, the g factors for all implanted Hg1-xCdxTe samples appear to be equivalent and are very similar to the values reported for the dangling‐bond defects in other ion‐implanted semiconductors. The EPR spectra produced by the boron implants do not seem to correspond to either the degenerate conduction electron bands that form in ion‐implanted Hg1-xCdxTe or the shallow donor states previously found in chemically doped CdTe. When implanted crystals are cooled below 4 K, partially resolved two‐component line shapes are observed at some orientations. Increasing temperature causes these two‐component lines to collapse into nearly Lorentzian line shapes with temperature‐dependent widths. This behavior is consistent with a thermally activated process by which the paramagnetic spins hop between inequivalent locations.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:5 ,  Issue: 5 )

Date of Publication:

Sep 1987

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