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To improve the control of the growth, a II–VI molecular‐beam epitaxy chamber has been equipped with an in situ spectroscopic ellipsometer. Using this characterization technique we checked the interdiffusion between CdTe and HgTe. A thin CdTe layer was deposited on a HgTe layer. The initial abrupt interface (less than 1 nm) evolved during successive annealings. Spectroscopic measurements were performed at each step. A modeling permits the evaluation of the thickness of a graded composition layer resulting from the interdiffusion at 260 °C.