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Properties of silicon and aluminum oxide thin films deposited by dual ion beam sputtering

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2 Author(s)
Emiliani, G. ; ENEA, Thin Film Laboratory, 00060 Rome, Italy ; Scaglione, S.

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Silicon dioxide and aluminum oxide thin films have been deposited by dual ion beam sputtering. Their properties have been investigated in order to point out the advantages of this technique. A bombardment of growing films has been performed by an Ar++O+2 ion beam with different energy and current values. The obtained films have correct stoichiometry, high density, and good mechanical properties.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:5 ,  Issue: 4 )