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Preparation of Ge–Pb–O thin films by radio frequency reactive sputtering

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2 Author(s)
Umezawa, T. ; Kitami Institute of Technology, Kitami, 090, Japan ; Sasaki, K.

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Dielectric properties of germanium oxide have not been investigated in detail. We have examined preliminary investigations on Ge–O films deposited by rf reactive sputtering. The dissipation factor of Ge–O films prepared ranges from 0.005 to 0.003, which is satisfactory as a low‐loss dielectric material. Ge–O film corresponding to the lowest tan δ has the nearest composition to stoichiometric GeO2. Aiming at obtaining the higher value of the dielectric constant, we have attempted to fabricate Ge–Pb–O films. The value of the dielectric constant of Ge–Pb–O film can be varied from 7 to 20 by varying Pb content in films, in spite of nearly constant value of tan δ (0.0035). By x‐ray diffraction study, it is revealed that Pb atoms in Ge–Pb–O films are taken into lattice sites as a phase of Pb2GeO4 or PbO2. We consider that the Pb2GeO4 phase formed in Ge–Pb–O films behaves as a mixture of GeO2 and 2PbO. It can be pointed out that the origin of the increase of the dielectric constant observed with increasing Pb content in films is due to the existence of a PbO or PbO2 phase.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:5 ,  Issue: 4 )