Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.573852
Films of nonstoichiometric aluminum nitride have been prepared using ‘‘voltage‐control’’ reactive sputtering. The influence of the target erosion on the glow discharge, deposition rate, and film conductivity is examined. The use of a reactive gas baffle is shown to improve reproducibility of film properties.