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An SNMS/SIMS apparatus is described that allows measurements in three different modes: SNMS direct bombardment mode (DBM), SNMS separate bombardment mode (SBM), and SIMS, with the sample remaining in the same positions. A novel geometrical arrangement that guarantees optimum performance in each operating mode was chosen for this combination. A postdescription of the two SNMS modes is given. From the presented results it could be deducted that direct quantification is possible; the sensitivity is in the ppm range for all elements; in in‐depth‐profiling high resolution and high speed can be obtained simultaneously; and conductors, semiconductors, and insulators can be analyzed. The results show that the combination of two SNMS modes and SIMS promises to become a valuable tool for surface, interface, and bulk analysis.