Cart (Loading....) | Create Account
Close category search window
 

Characteristics of the material improvement process for silicon on sapphire by solid phase epitaxial regrowth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Richmond, Eliezer Dovid ; Naval Research Laboratory, Washington, D.C. 20234 ; Knudson, A.R. ; Magee, T.J. ; Kawayoshi, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.572448 

A comprehensive matrix study of the material modification of chemical vapor deposited silicon on sapphire has been made. The modification is effected by applying twice the process of ion implantation with 28 Si+ ions followed by solid phase epitaxial regrowth (SPEG) induced by furnace annealing. The matrix consisted of varying the fluences for the first and second implantation from just above the critical fluence for forming an amorphous phase to 7×1015cm-2. The defect reduction was studied for each sample of the matrix. This study has shown that the density of defects at the silicon/sapphire interface and silicon surface depends on both implantations. The deposited damage energy peak position is estimated to occur at a depth ∼Rp for a substrate temperature of 330 K during implantation. The position of the damage peak affects the estimated damage at the silicon sapphire interface which controls the aluminum outdiffusion. The major reduction in the defect density has already occurred for fluences of the two implantations such that the amorphous regions terminate within about 200 Å of each other. Using the width of the random yield portion of the channeled spectra for MeV 3He+ ions overestimates the width of the amorphous layer.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:2 ,  Issue: 2 )

Date of Publication:

Apr 1984

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.