By Topic

Analysis and characterization of native oxide growth on epitaxial Si1-xGex films after a chemical clean

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lee, I.-M. ; School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907-1283 ; Takoudis, C.G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ellipsometry, contact angle goniometry, atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) are used to study native oxide growth on SiGe films (with Ge content of 0%, 20%, 40%, and 100%) after a chemical clean. Ellipsometry suggests that the presence of Ge affects the initial oxide thickness right after the clean but it does not affect the rate of native oxide growth. Roughness of SiGe samples as measured by AFM does not appear to be affected by the native oxide growth or the Ge content in the film. The decrease in advancing (and receding) contact angles of SiGe samples after the chemical clean is apparently the result of both increasing oxide thickness and oxide solid phase composition. XPS results suggest that increasing Ge content in the film increases the oxidation of SiGe surface atoms. The chemical shifts in the Si 2p and Ge 3d spectra suggest that both Si and Ge react with oxygen to form SiO2 and GeO2. Such data suggests that contact angle measurements could be a rapid method to determine the state and passivation characteristics of a silicon substrate surface as a function of time; however, such a technique would not be as effective for SiGe films, the chemical composition of their native oxides of which would also change as a function of time. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:15 ,  Issue: 6 )