Si1-xGex were deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550 °C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGex films by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGex films can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGex films was deduced from the recorded XRD and Raman spectra. © 1997 American Vacuum Society.