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Physical properties of dual ion beam deposited (B0.5-xSix)N0.5 films

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7 Author(s)
Zhao, X.-A. ; Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong ; Ong, C.W. ; Chan, K.F. ; Ng, Y.M.
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(B0.5-xSix)N0.5 films (0≤x≤0.5) were prepared by dual ion beam deposition. Buffer layers were added to improve the film adhesion. The film structure was characterized by x-ray photoelectron spectroscopy, infrared absorption, and x-ray diffraction. The hardness and elastic modulus were measured by a nanoindenter. The I–V curves of the Ti/(B0.5-xSix)N0.5/buffer/p-Si/Ti diodes were investigated. The films are composites of cubic-boron nitride (c-BN), h-BN, and Si–N. When x=0, the film contains 70–75 vol % c-BN and has a hardness ≈38 GPa, but peels off quickly from the substrate after exposure to air. When x increases to 0.013, a small amount of Si–N phase is formed, which serves to release part of the internal stress without affecting the volume fraction of c-BN or the mechanical strength, and good adhesion is achieved. For higher Si content (0.013≪x≤0.067), the c-BN phase is disrupted with simultaneous replacement by h-BN. Rapid drops in the hardness and elastic modulus follow. When the Si content continues to increase (0.067 to 0.51), the fraction of the h-BN phase decreases progressively with simultaneous replacement by Si–N. Both the hardness and elastic modulus rise and approach those of silicon nitride. I–V curves of Ti/(B0.5-xSix)N0.5/buffer/p-Si/Ti diodes show a strong rectifying effect, which becomes less pronounced when x is larger.© 1997 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:15 ,  Issue: 4 )