Anodic oxidation at room temperature in dilute H2SiF6 solution is proposed as a method to grow the low-temperature fluorinated oxides. It was found that two competing mechanisms exist in anodization. One is the growing mechanism due to constant current anodization and the other is the etching mechanism due to the existing HF solution. It was observed that fluorine atoms are incorporated into the anodic oxides. A growth rate of about 1 μm/h was found that is much higher than by liquid phase deposition (LPD) techinques reported nowadays. Also, the anodic oxides show less leakage current and higher breakdown field properties than the conventional LPD oxides. An excellent breakdown field strength of 10 MV/cm was found in this work. © 1997 American Vacuum Society.