Cart (Loading....) | Create Account
Close category search window
 

Effect of N2 partial pressure on the structure of MgO thin films deposited by radio frequency-magnetron sputtering with single-crystal MgO target

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Misaki, Yukinori ; Department of Electrical Engineering, Takuma National College of Technology, 551 Kouda Takuma Mitoyo, Kagawa 769-11, Japan ; Mikawa, Michio ; Ishiguro, Takashi ; Hamasaki, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.580474 

We report the effect of N2 partial pressure on the structure of MgO thin films deposited on Si(100) substrates by radio frequency-magnetron sputtering in Ar+N2 mixture. The films were evaluated using x-ray diffractmeter. As increasing N2 partial pressure, the intensity of (200)MgO reflection increased and saturated above partial pressure of 4.4×10-1 Pa, which corresponds to N2 flow rate of 3 sccm. Effect of N2 gas on the structure of MgO thin films were investigated by plasma emission spectroscopy. The increase of the optical emission intensity of NH spectrum results in the increase of intensity of (200)MgO reflection. We found the strong relationship between the emission intensity of NH spectrum and intensity of (200)MgO reflection. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:15 ,  Issue: 1 )

Date of Publication:

Jan 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.