By Topic

Morphology and growth mode of Al films deposited by chemical vapor deposition from dimethylethylamine alane on GaAs(001)2×4 surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Venkateswaran, N. ; Center for Interfacial Engineering, University of Minnesota, Minneapolis, Minnesota 55455 ; Karpov, I. ; Gladfelter, W. ; Franciosi, A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated the initial stages of growth of Al films fabricated by chemical vapor deposition at 100 °C on GaAs(001)2×4 surfaces using the molecular precursor dimethylethylamine alane. In situ reflection high energy electron diffraction and scanning tunneling microscopy and spectroscopy, as well as ex situ atomic and lateral force microscopy, were employed for morphological analysis. Film growth was found to occur in the Volmer–Weber mode and involve islands with remarkably low z‐aspect ratio (∼1:16). Scanning tunneling spectroscopy data on some of these islands in the early stages of growth suggest the formation of an AlAs interface phase. © 1996 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:14 ,  Issue: 3 )