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Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques

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4 Author(s)
Martins, R. ; Materials Science Department, Faculty of Science and Technology of New University of Lisbon, Lisbon, Portugal ; Vieira, M. ; Ferreira, I. ; Fortunato, E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.579543 

The aim of this work is to present experimental data concerning the role of the oxygen partial pressure during the production process on the properties (structure, morphology, composition, and transport properties) exhibited by doped microcrystalline silicon oxycarbide films. The films were produced by a two consecutive decomposition and deposition chamber system, where a spatial separation between the plasma and the growth regions is achieved. The films produced by this technique are highly conductive and highly transparent with suitable properties for optoelectronic applications requiring wide band‐gap and low‐conductivity materials. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:13 ,  Issue: 4 )

Date of Publication:

Jul 1995

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