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Effect of wall charging on an oxygen plasma created in a helicon diffusion reactor used for silica deposition

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2 Author(s)
Charles, C. ; Plasma Research Laboratory, Research School of Physical Sciences and Engineering, Australian National University, ACT 0200, Australia ; Boswell, R.

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A continuous oxygen plasma operating at a radio frequency power of 800 W and a pressure of 2 mTorr has been created in a helicon diffusion reactor used for the deposition of silicon dioxide films. An energy selective mass spectrometer and a Langmuir probe attached to the wall of the silica covered aluminum diffusion chamber below the source have been used to characterize the plasma [ion energy distribution function (IEDF), plasma potential, floating potential, plasma density]. The IEDF of the O+2 ions escaping from the plasma to the sidewalls of the chamber consists of a single peak at an energy corresponding to the plasma potential in the chamber (≊32 V). This rather high value is a consequence of the charging effect of the insulating walls at the initiation of the discharge, and would need to be taken account of when estimating the energy of the ions arriving at a biased substrate. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:13 ,  Issue: 4 )