Cart (Loading....) | Create Account
Close category search window

Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Schlaf, R. ; Hahn‐Meitner‐Institut, Bereich CG, 14109 Berlin, Germany ; Louder, D. ; Lang, O. ; Pettenkofer, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

SnS2 and SnSe2 thin films were deposited by molecular beam epitaxy (MBE) methods on a variety of layered semiconductor substrates (freshly cleaved SnS2, SnSe2, WSe2, MoS2, MoTe2, GaSe, InSe) and cleaved mica, for investigation of the interfaces formed as a result of MBE growth. These ultrathin films were characterized in situ by x‐ray photoelectron spectroscopy and surface reflection high energy and low energy electron diffraction techniques. The growth modes were verified ex situ by scanning tunneling microscopy and/or atomic force microscopy [scanning probe microscopies (SPM)]. Despite the chemical and structural similarities between SnS2 and SnSe2, SPM measurements show that the two materials as ultrathin films have different growth morphologies in the first few monolayers. Photoelectron spectroscopy (PES) measurements lead to the conclusion that both materials grow on the basal planes of most layered substrates in an epitaxial, layer‐by‐layer mode. Small deviations from ideal Frank–van der Merwe growth for these thin films could be determined from PES intensity ratios versus coverage. Deposition of both materials on freshly cleaved mica, where the lattice mismatch between the substrate and the overlayer surface unit cell dimension exceeds 40%, yields exclusively 500–1000 Å diameter epitaxial islands with threefold symmetry. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:13 ,  Issue: 3 )

Date of Publication:

May 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.