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Bipolar quantum-transport modeling of carrier injection into a SCH-quantum-well laser

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2 Author(s)
Tsuchiya, H. ; Dept. of Electr. & Electron. Eng., Kobe Univ., Japan ; Miyoshi, T.

A quantum mechanical model of carrier transport in separate confinement heterostructure (SCH) quantum-well lasers based on the Wigner function is presented for the first time. In the simulation, the three quantum Liouville equations with respect to the Wigner functions defined for electron, heavy-hole, and light-hole are solved simultaneously with the Poisson's equation to consider self-consistency in potential, As a simulation model, InGaAsP-InGaAs SCH quantum-well lasers are considered. The carrier injection into single and double quantum-well lasers is simulated. It is demonstrated that the amount of electrons and holes injected into the single quantum-well active layer is not equal in general if the quantum transport is considered. In the double quantum-well structure, the bottleneck phenomenon of heavy-hole injection into the second well and the quite different shape of heavy-hole density profiles in the two wells are simulated

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 5 )

Date of Publication:

May 1996

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