By Topic

Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Ren, F. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Pearton, S.J. ; Abernathy, C.R. ; Lothian, J.R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A simple deposition and etch‐back technique to form narrow (∼300 Å) masks for subsequent pattern transfer into semiconductors is reported. High ion density (∼5×1011 cm-3) electron cyclotron resonance CH4/H2/Ar (for In‐containing materials) or BCl3/Ar (for Ga‐containing materials) discharges are used to give anisotropic low‐damage etching. After initial resist patterning using conventional stepper lithography, conformal plasma‐enhanced chemical vapor deposition or reactive sputtering of a metal (W, WSix) or a low temperature dielectric (SiNx, SiO2) is followed by an anisotropic etchback to leave a thin sidewall on the resist feature. The resist is then removed by dry etching, leaving a sidewall which can be used as a mask for pattern transfer into the semiconductor. Examples of novel quantum‐wire laser structures fabricated in GaN and InP–InGaAsP systems are given. The nanolaser structures can be integrated with microdisk lasers using combined dry etching and selective wet chemical etching. Low ion energies (≪100 eV) are required to avoid sputtering of the mask material and changes in the near‐surface stoichiometry of the semiconductor. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:13 ,  Issue: 3 )