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Interaction of Al with oxidized Ge/Si(001): A synchrotron radiation photoelectron spectroscopy study

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4 Author(s)
Prabhakaran, K. ; NTT Basic Research Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan ; Ogino, T. ; Scimeca, T. ; Oshima, M.

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Interaction of aluminum with an oxidized sample of ultrathin layer Ge (7 Å) deposited on Si(001) at room temperature [Ge (7 Å)/Si(001) RT] is studied employing synchrotron radiation photoelectron spectroscopy. Ge (7 Å)/Si(001) RT, on exposure to air, forms Ge suboxides, GeO2 and Si suboxides on the surface. GeO2 is selectively removed completely by rinsing the sample in warm water, and during this process a small amount of Si oxides is also formed. Upon depositing Al on this surface, it reacts with oxides of Si and Ge and forms an overlayer of Al2O3 on the surface, thereby reducing the oxides to elemental Si and Ge. Further, the reaction is activated by an increase in surface temperature. In the early stages of the reaction, reduction of suboxides take place in preference to SiO2.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:12 ,  Issue: 2 )

Date of Publication:

Mar 1994

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