By Topic

Effect of deposition technique on the As‐deposited microstructure of copper thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Walsh, L.Harper ; Rome Laboratory, Griffiss Air Force Base, New York 13441‐5700 ; Feilchenfeld, Natalie B. ; Schwarz, J.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Copper metallization is an ideal choice for use in semiconductor devices and packages. The metal’s desirable properties are low resistivity, good electromigration resistance, solderability, and low cost. Microstructural differences in copper deposited by four techniques commonly used in the microelectronics industry are determined. These differences were measured using optical microscopy, x‐ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and secondary‐ion mass spectroscopy. The results were compared to clearly define the differences in microstructure among the different copper films providing a basis for interpreting the effects of copper film deposition method on film microstructure and those physical properties influenced by microstructure. Finally the microstructural rather than chemical differences are used to predict how each copper sample will react to the same wet etchant.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:10 ,  Issue: 4 )