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Pattern transfer onto carbon films on silicon using radio frequency oxygen plasma etching

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3 Author(s)
Chan, K.K. ; Department of Engineering, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, United Kingdom ; Amaratunga, G.A.J. ; Wong, T.K.S.

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Pattern transfer onto semiconducting carbon films with diamondlike properties using optical lithography and radio frequency oxygen plasma etching is reported. Titanium, aluminium, and gold were used as masking materials during oxygen etching. It was found that the titanium mask was most suitable for this process because of better resistance to the oxygen plasma. The microstructures observed were very uniform and well defined.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:10 ,  Issue: 1 )