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Plasma enhanced in situ chamber cleaning evaluated by extracted-plasma-parameter analysis

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5 Author(s)
Ino, K. ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; Natori, I. ; Ichikawa, A. ; Vrtis, R.N.
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We have demonstrated that high-efficiency in situ chamber cleaning with short gas residence time is possible for SiO2 etching chambers by use of NF3 plasma, and that the endpoint determination of the cleaning is possible by monitoring the optical emission intensities of CO or H. Nitrogen trifluoride (NF3), which has a low N-F bond energy, can generate a plasma with a high density of ions and radicals featuring low kinetic energy. The cleaning efficiency of several halogenated-gas plasmas has been evaluated based on extracted-plasma-parameter analysis. In this analysis important plasma parameters, such as ion energy and ion flux density, can be extracted through a simple rf waveform measurement at the plasma excitation electrode. The accuracy of this technique has been confirmed with a newly developed rf plasma direct probing method and by ion current measurements

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:9 ,  Issue: 2 )

Date of Publication:

May 1996

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