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Coaxial impact collision ion scattering spectroscopy (CAICISS) has been applied to an analysis of As‐stabilized GaAs surfaces. CAICISS spectral changes were observed, depending on the incident beam angle to the crystal surface. The shadow cone radius of Ga atoms in the GaAs crystal was obtained from the angular dependence of the signal intensities. The atom positions of As atoms on the top surface are also discussed on the basis of the result that the distance between the dimer atoms is shortened by less than 10% from the normal lattice constant.