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Effects of ion implantation doping on electrical and chemisorptive properties of tin oxide thin films

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1 Author(s)
Shih-Chia Chang ; Electronics Department, General Motors Research Laboratories, Warren, Michigan 48090

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Antimony and indium were implanted into tin oxide films prepared by reactive rf sputtering from a sintered tin oxide target. A dosage of 2×1015 ions/cm2 of Sb (or In) increased (or decreased) the film conductivity more than two decades after the samples were annealed in air at temperatures ≥350 °C. These implantations reduced the sensitivity of the tin oxide conductivity to the chemisorption of oxidic gases such as NO and O2. This sensitivity reduction is explained in terms of the annihilation of surface chemisorption centers and/or the creation of trapping states by the implantation process.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:1 ,  Issue: 2 )