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A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (Vth) lowering and variation. RDF effects are found to be caused primarily by body RDF. The trigate bulk MOSFET offers a new method of VTH adjustment, via tuning of the retrograde body doping depth, to mitigate tradeoffs in VTH variation and short-channel effect control.