By Topic

Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Changhwan Shin ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA ; Xin Sun ; Tsu-Jae King Liu

A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (Vth) lowering and variation. RDF effects are found to be caused primarily by body RDF. The trigate bulk MOSFET offers a new method of VTH adjustment, via tuning of the retrograde body doping depth, to mitigate tradeoffs in VTH variation and short-channel effect control.

Published in:

IEEE Transactions on Electron Devices  (Volume:56 ,  Issue: 7 )