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Improvement on lithography pattern profile by plasma treatment

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8 Author(s)
Soo, C.P. ; Department of Materials Science, National University of Singapore, Singapore 119260 ; Bourdillon, A.J. ; Valiyaveettil, S. ; Huan, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.582101 

New chemical information has been obtained which explains “footing” and “bottom pinching” effects in chemically amplified (CA) resists on a silicon nitride surface. X-ray photoelectron spectroscopy measurements indicate that the residual alkaline molecules on the nitride surface play a major role in the formation of nitride footing. It appears that the organic contaminants are not responsible for nitride footing. O2 and N2O/SiH4 plasma treatment are used to modify the silicon nitride surface. Less severe footing is observed if the nitride surface is treated with N2O/SiH4 plasma. This is attributed to the deposition of a thin oxide cap on the nitride substrate, which suppresses the surface basicity. However, extended N2O plasma treatment causes resist bottom pinching. This is ascribed to the surface acidity of a newly formed oxide cap which enhances the CA resist development process. Results show that the N (1s) peak, after extended N2O/SiH4 plasma treatment, has shifted to a higher binding state which suggests that the nitride surface becomes acidic, causing bottom pinching.© 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:17 ,  Issue: 4 )

Date of Publication:

Jul 1999

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