Cart (Loading....) | Create Account
Close category search window

Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
del Prado, A. ; Departamento de Fı´sica Aplicada III, Facultad Ciencias Fı´sicas, Universidad Complutense de Madrid, 28040 Madrid, Spain ; Martı nez, F.L. ; Martil, I. ; Gonzalez-Dı az, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effect of deposition temperature on the physical properties of SiOxNy films has been studied. The films have been deposited from mixtures of SiH4, O2 and N2, using the electron cyclotron resonance–chemical vapor deposition technique, with substrate temperature ranging from room temperature (50 °C) to 200 °C. When substrate temperature is increased, a slight decrease in both Si–H and N–H bond concentration is detected. A small shift (10–17 cm-1) in the dominant Fourier transform infrared (FTIR) absorption peak (Si–O/Si–N stretching band) seems to be associated with a decrease in the N–H bond concentration. This behavior is attributed to the formation of Si–N bonds at the expense of N–H bonds, with no significant change in the film composition. Full width at half maximum (FWHM) of the dominant FTIR peak decreases as temperature is increased for all the composition range, indicating an improvement in the quality of the films. Silicon oxide films (SiO2.0) deposited at 200 °C show improved properties with respect to those deposited at room temperature. FWHM decreases from 95 to 87 cm-1, and the shoulder-to-peak ratio from 0.29 to 0.22. The position of the Si-O stretching band (1071 cm-1) is unaffected. These values are very close to those obtained for thermally grown oxides, while the thermal budget of the process is significantly reduced. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:17 ,  Issue: 4 )

Date of Publication:

Jul 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.