By Topic

Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Kim, D.Y. ; School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea ; Lee, H.J. ; Jung, H.Y. ; Lee, H.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Extreme ultraviolet lithography (EUVL) is currently being examined for its potential use in the next generation of lithography techniques. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics. This study investigated the etching properties of EUVL mask materials, such as Al2O3 antireflection coating (ARC), TaN (absorber layer) and Ru (buffer/capping layer), by varying the Cl2/Ar gas flow ratio, dc self-bias voltage (Vdc) and top electrode power in inductively coupled plasma. The Al2O3 (ARC) layer could be etched with an etch selectivity approaching 0.5 over the TaN absorber layer. The ARC/TaN stack could be etched with an infinitely high etch selectivity over the Ru layer. Etching of the stacked mask structures with a 200 nm line/space hydrogen silsesquioxane e-beam resist pattern showed a profile angle of 85° and an etch stop on the Ru buffer/capping layer.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 4 )