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Influence of a post–chemical mechanical polishing cleaning process on the ferroelectric properties of a Pb(Zr,Ti)O3 thin film capacitor fabricated by the damascene process

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4 Author(s)
Kim, Nam-Hoon ; The Research Institute for Catalysis, Chonnam National University, 300 Yongbong-dong, Buk-gu, Gwangju 500-757, Republic of Korea ; Jun, Young-Kil ; Ko, Pil-Ju ; Lee, Kang-Yeon

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2900712 

The author first applied a chemical mechanical polishing (CMP) process to fabricate a ferroelectric Pb(Zr,Ti)O3 (PZT) capacitor instead of using a plasma etching process for the vertical profile without plasma damage in their previous study. The post-CMP cleaning process was very important in this CMP process. In this study, they investigated the effects of the post-CMP cleaning process on the ferroelectric properties of a PZT thin film capacitor. They proposed an optimized post-CMP cleaning process that uses a SC-1 chemical, diluted HF treatment, and an ultrasonic cleaning process. The slurry residues on the surface of the PZT thin films were removed. The polarization-voltage (P-V) characteristics showed the typical hysteresis loop of PZT thin films after a post-CMP cleaning process with the optimized conditions, while the ferroelectric characteristics could not be observed in the specimen without the post-CMP cleaning process. The remanent polarization (Pr) and coercive voltage (Vc) of the PZT thin films after the post-CMP process with the optimized condition were 17.092 μC/cm2 and 3.252 V, respectively.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 4 )

Date of Publication:

Jul 2008

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