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Microstructural evolution of nickel-germanide in the Ni1-xTax/Ge systems during in situ annealing

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6 Author(s)
Lee, Jae-Wook ; School of Advanced Materials Science & Engineering and Center for Nanotubes & Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, South Korea ; Bae, Jee-Hwan ; Park, Min-Ho ; Kang, Han-Byul
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The formation and morphological evolution of the germanides formed in the Ni1-xTax/Ge (x=0 and 0.1) systems were examined using ex situ and in situ annealing experiments. It was observed that the Ni-germanide in the Ni0.9Ta0.1/Ge system remained stable at temperatures up to 550 °C whereas the Ni-germanide in the Ni/Ge system agglomerated and was unstable. Microstructural and chemical analyses of the Ni0.9Ta0.1/Ge system during and after in situ annealing in a transmission electron microscope confirmed that the Ta-rich layer was formed by the accumulation of Ta atoms on the interface between the Ni0.9Ta0.1 alloy film and the Ge substrate during the diffusion reaction, and a small amount of residual Ta was found in the Ni-germanide grains. Ultimately, the Ta-rich layer helps reduce the level of agglomeration in the Ni-germanide film and improves the thermal stability of Ni-germanide.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 4 )