By Topic

Optical properties and electrical properties of heavily Al-doped ZnSe layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Oh, D.C. ; Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan ; Takai, T. ; Im, I.H. ; Park, S.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7×1017–6×1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn-related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7×1018 cm-3 and RD1 is dominant in more heavily doped layers near 1×1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3×1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 2 )