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Optical properties and electrical properties of heavily Al-doped ZnSe layers

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11 Author(s)
Oh, D.C. ; Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan ; Takai, T. ; Im, I.H. ; Park, S.H.
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We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7×1017–6×1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn-related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7×1018 cm-3 and RD1 is dominant in more heavily doped layers near 1×1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3×1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 2 )