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Low temperature plasma etching for Si3N4 waveguide applications

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6 Author(s)
Celo, D. ; Department of Electronics, Carleton University, Ottawa, Ontario K1S 5B6, Canada ; Vandusen, R. ; Smy, T. ; Albert, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2836424 

Highly selective and anisotropic low temperature electron cyclotron resonance plasma etching process for silicon nitride optical rib waveguide devices compatible with integrated circuit technology is presented. Etching at low temperatures (-30 °C) with SF6/O2 chemistry in combination with a silicon dioxide hard mask achieved good anisotropy with the vertical sidewalls.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 2 )

Date of Publication:

Mar 2008

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