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Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by metal-organic chemical vapor deposition

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6 Author(s)
Zhu, Junjie ; School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Engineering College, Chonbuk National University, Chonju 561-756, Korea and Physics Department, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindem, 0318 Oslo, Norway ; Yao, Ran ; Song, Haiyan ; Zhuxi Fu
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ZnO films have been grown on Si(111) substrates by metal-organic chemical vapor deposition using diethylzinc and CO2 as precursors. The effects of growth temperature on growth rate, structure, and optical properties of the ZnO films were investigated in a temperature range between 450 and 700 °C. As growth temperature increased, the growth mode changed from kinetics-limited to mass-transfer-limited, and finally, to desorption-limited mode. Using the Arrhenius equation, the activation energy for the kinetics-limited growth mode was estimated to be 105 meV. The crystalline quality was also strongly dependent on growth temperature. With increasing growth temperature, the width of x-ray diffraction peaks decreases and the photoluminescence intensity enhances. Using CO2 as the oxygen source, we found that the optimal growth temperature was near 600 °C.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:26 ,  Issue: 2 )