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Optimizing the dielectric performance of TiO2 thin films through control of plasma-enhanced chemical vapor deposition process conditions

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4 Author(s)
Yang, Wenli ; Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 ; Monson, Alexander ; Marino, Joseph ; Wolden, Colin A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2484649 

The influence of plasma-enhanced chemical vapor deposition conditions on the dielectric performance of as-deposited TiO2 films was studied. It was found that the leakage current density was strongly correlated to the flatband voltage shift (ΔVFB). The value of ΔVFB increased linearly with the oxygen density, while an optimum was observed with respect to plasma power. By appropriate control of these two variables the electrical performance of as-deposited films approached those of annealed samples.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 4 )