Cart (Loading....) | Create Account
Close category search window
 

Effects of additive C4F8 during inductively coupled BCl3/C4F8/Ar plasma etching of TaN and HfO2 for gate stack patterning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ko, J.H. ; School of Advanced Materials Science and Engineering, and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea ; Kim, D.Y. ; Park, M.S. ; Lee, N.-E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2747621 

In this work, the authors investigated the etching characteristics of TaN and HfO2 layers for gate stack patterning in BCl3/Ar and BCl3/C4F8/Ar inductively coupled plasmas and the effects of C4F8 addition on the etch selectivity of the TaN to the HfO2 layer. Addition of C4F8 gas to the BCl3/Ar chemistry improved the TaN/HfO2 etch selectivity because adding the C4F8 gas enhances the formation of the CFxCly passivation layer on HfO2 surface and decreased the HfO2 etch rate more rapidly than the TaN etch rate in a disproportionate way. Reduction in the etch time for HfO2 layer also increases the TaN/HfO2 etch selectivity because the etch time gets closer to the initiation time for HfO2 etching.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 4 )

Date of Publication:

Jul 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.