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Micro-optical switch device based on semiconductor-to-metallic phase transition characteristics of W-doped VO2 smart coatings

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5 Author(s)
Soltani, M. ; INRS-Énergie, Matériaux et Télécommunications, 1650 Lionel Boulet, Varennes, Québec J3X 1S2, Canada ; Chaker, M. ; Haddad, E. ; Kruzelecky, R.
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The authors have successfully fabricated planar micro-optical switch device exploiting the transmitting semiconductor (on) to the reflecting metallic (off) phase transition of thermochromic W(1.4 at. %)-doped VO2 smart coatings and driven by an external voltage. The starting W-doped VO2-coated Al2O3 exhibited infrared transmittance switching about 45%. After the microfabrication, the temperature dependence of electrical resistance of the micro-optical switch showed clearly its well-known semiconductor-to-metallic phase transition at a transition temperature of 36 °C. A reversible transmittance switching (on/off) as high as 28 dB was achieved with this device at λ=1.55 μm. In addition, the transmittance switching modulation of the device was demonstrated at 1.55 μm by switching the micro-optical switch simultaneously with dc and ac voltages.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 4 )