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Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of Si(001)2×1

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2 Author(s)
Kolditz, B. ; Department of Physics, Bradley University, Peoria, Illinois 61625 ; Roos, K.R.

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The well known dimer-dangling-bond surface state of the Si(001)2×1 surface is very sensitive to even a small amount of adsorption from the ambient pressure in an UHV chamber. The authors show the decay of the surface state intensity, obtained with ultraviolet photoelectron spectroscopy (UPS), as a function of time for two different ambient UHV chamber pressures typically considered to be sufficiently low for carrying out surface sensitive experiments. In ambient pressures greater than 1×10-10 Torr, the dimer-dangling-bond surface state decays completely in less than 1 h, even at the relatively “good” pressure of 4×10-10 Torr. The reason for the decay is likely due to the passivation of the dimer dangling bonds predominantly as a result of H adsorption from the ambient pressure in the UHV chamber. Furthermore, Ni-contamination-induced defects on the Si(001)2×1 surface alone do not cause the decay of the surface state. As long as unsaturated dimer dangling bonds remain on the surface, even in the presence of long range Ni-induced defects, the surface state produces a strong UPS signal.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 4 )

Date of Publication:

Jul 2007

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