Cart (Loading....) | Create Account
Close category search window
 

Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of Si(001)2×1

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kolditz, B. ; Department of Physics, Bradley University, Peoria, Illinois 61625 ; Roos, K.R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2740295 

The well known dimer-dangling-bond surface state of the Si(001)2×1 surface is very sensitive to even a small amount of adsorption from the ambient pressure in an UHV chamber. The authors show the decay of the surface state intensity, obtained with ultraviolet photoelectron spectroscopy (UPS), as a function of time for two different ambient UHV chamber pressures typically considered to be sufficiently low for carrying out surface sensitive experiments. In ambient pressures greater than 1×10-10 Torr, the dimer-dangling-bond surface state decays completely in less than 1 h, even at the relatively “good” pressure of 4×10-10 Torr. The reason for the decay is likely due to the passivation of the dimer dangling bonds predominantly as a result of H adsorption from the ambient pressure in the UHV chamber. Furthermore, Ni-contamination-induced defects on the Si(001)2×1 surface alone do not cause the decay of the surface state. As long as unsaturated dimer dangling bonds remain on the surface, even in the presence of long range Ni-induced defects, the surface state produces a strong UPS signal.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 4 )

Date of Publication:

Jul 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.